| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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21,000 pcs
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21000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTMT150N65S3HF from On Semiconductor is a high-performance N-Channel MOSFET belonging to the SUPERFET III FRFET family. It utilizes advanced charge balance technology for excellent low on-resistance and reduced gate charge, making it suitable for miniaturization and higher efficiency in various power systems.
Key electrical specifications include a maximum drain-source voltage of 650V and a continuous drain current of 24A. The device features a low on-resistance of 150mOhm at 12A and 10V, and a typical gate charge of 43nC. Its input capacitance is rated at 1985pF at 400V, and the gate source threshold voltage is 5V at 540µA.
This MOSFET is designed for demanding applications such as telecom and server power supplies, industrial power supplies, UPS, and solar systems. The TDFN4 package, also known as PQFN (8x8), is an ultra-slim, low-profile surface-mount package with separated power and drive source connections for improved switching performance. It offers excellent thermal performance with a maximum power dissipation of 192W at 25°C.
The operating temperature range is from -55°C to 150°C. The device is Pb-free and RoHS compliant, with a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the NTMT150N65S3HF is 650V.
The continuous drain current (Id) for the NTMT150N65S3HF is 24A.
The typical gate charge (Qg) for the NTMT150N65S3HF is 43nC at 10V.
The Rds(on) is a maximum of 150mOhm at 12A and 10V.
The operating temperature range is -55°C to 150°C.
The NTMT150N65S3HF is supplied in a 4-PQFN (8x8) package for surface mounting.