| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,185 pcs
|
1185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,185 pcs
|
1185 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMT045N065SC1 from On Semiconductor is a high-performance Silicon Carbide (SiC) N-Channel MOSFET designed for demanding applications. It boasts a maximum drain-to-source voltage (Vdss) of 650V and a continuous drain current (Id) of 55A at 25°C case temperature.
Key electrical characteristics include a low typical on-resistance (RDS(on)) of 33 mOhm at 18V gate-source voltage, and a typical total gate charge (Qg) of 105 nC. The device operates over a wide temperature range from -55°C to 175°C.
This MOSFET is housed in a 4-PowerTSFN surface mount package, specifically a 4-TDFN (8x8) configuration, making it suitable for compact designs. Its technology is based on Silicon Carbide, offering advantages in efficiency and power handling compared to traditional silicon MOSFETs.
Typical applications for the NTMT045N065SC1 include switching mode power supplies (SMPS), solar inverters, uninterruptible power supplies (UPS), and energy storage systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $9.82 | $9.82 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 650 V.
The typical on-resistance is 33 mOhm at 18V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in a 4-PowerTSFN package, specifically a 4-TDFN (8x8) configuration.
Yes, the RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.