| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,306 pcs
|
2306 pcs | On Request | 1 | On Request | On Request | 02+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMS5P02R2 is a P-Channel, Enhancement Mode MOSFET designed for high-density power applications. It offers high efficiency with ultra-low RDS(on), making it suitable for power management in portable and battery-powered devices such as computers, printers, and cellular telephones.
This MOSFET has a drain-to-source voltage (Vdss) of 20V and a continuous drain current of up to 7.05A at Tj. The Rds(on) is a maximum of 33mOhm at 5.4A and 4.5V Vgs. It operates within a temperature range of -55°C to +150°C.
The device is housed in a miniature SOIC-8 surface mount package, which saves board space. It is Pb-Free and RoHS Compliant. The NVMS prefix is available for automotive applications requiring AEC-Q101 qualification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTMS5P02R2 is 20V.
The maximum continuous drain current at 25°C is -7.05A.
The Rds On (Max) is 33mOhm at 5.4A and 4.5V Vgs.
The NTMS5P02R2 is supplied in an 8-SOIC package.
Yes, the NTMS5P02R2 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.