NTMS4916NR2G The NTMS4916NR2G is an N-Channel MOSFET from On Semiconductor. It features a 30V drain-source voltage and a low on-resistance of 9mOhm.
Mfr Part #:

NTMS4916NR2G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTMS4916NR2G is an N-Channel MOSFET from On Semiconductor. It features a 30V drain-source voltage and a low on-resistance of 9mOhm.
✓ Total Stock: 22,644 pcs
$ Price Range: $0.99

NTMS4916NR2G Available from 3 distributors

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21,569 pcs
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1,000 pcs
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75 pcs
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NTMS4916NR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMS4916NR2G Description

Short technical summary and product information.

This N-Channel MOSFET, part number NTMS4916NR2G from On Semiconductor, is designed for power switching applications. It offers a drain-source voltage (Vdss) of 30V and a maximum on-resistance (Rds On) of 9mOhm at 12A and 10V gate-source voltage.

 

The device has a continuous drain current rating of 7.8A at 25°C and operates within a temperature range of -55°C to 150°C (TJ). Key electrical parameters include an input capacitance (Ciss) of 1376 pF at 25V and a gate charge (Qg) of 15 nC at 4.5V.

 

Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, the NTMS4916NR2G is suitable for various electronic designs requiring efficient power control. Its technology is based on MOSFET (Metal Oxide) principles, providing reliable performance for demanding applications.

NTMS4916NR2G Quick Information

Product Type: MOSFET
Canonical Name: NTMS4916NR2G N-Channel MOSFET
Subcategory: N-Channel

NTMS4916NR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMS4916NR2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMS4916NR2G Features

  • 30V drain-source voltage rating.
  • Low 9mOhm Rds On at 12A, 10V.
  • 7.8A continuous drain current.
  • 8-SOIC surface mount package.
  • Wide -55°C to 150°C operating temperature.

NTMS4916NR2G Applications

  • Suitable for power switching circuits.
  • Used in DC-DC converters.
  • Ideal for load management.
  • Applicable in battery powered devices.

NTMS4916NR2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage for the NTMS4916NR2G MOSFET?

The drain-source voltage (Vdss) for the NTMS4916NR2G is 30V.

What is the maximum on-resistance of the NTMS4916NR2G?

The maximum on-resistance (Rds On) is 9mOhm at 12A drain current and 10V gate-source voltage.

What is the continuous drain current for the NTMS4916NR2G?

The continuous drain current (Id) is 7.8A at 25°C.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTMS4916NR2G MOSFET supplied in?

The NTMS4916NR2G is supplied in an 8-SOIC package.

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