| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,145 pcs
|
2145 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
550 pcs
|
550 pcs | On Request | 1 | On Request | On Request | 0528+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMS4706NR2G is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.4A at 25°C. The on-resistance (Rds On) is specified as a maximum of 12mOhm at 10.3A and 10V gate-source voltage.
This MOSFET operates within a temperature range of -55°C to 150°C (TJ). Key electrical parameters include a gate threshold voltage (Vgs(th)) of 2.5V at 250µA, a maximum gate charge (Qg) of 15nC at 4.5V, and a maximum gate-source voltage (Vgs) of ±20V. The input capacitance (Ciss) is a maximum of 950pF at 24V.
Designed for surface mounting, the NTMS4706NR2G comes in an 8-SOIC package. Its metal oxide technology ensures efficient switching and power handling, with a maximum power dissipation of 830mW (Ta). This component is suitable for applications requiring reliable N-channel MOSFET performance in a compact form factor.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NTMS4706NR2G is 30V.
The continuous drain current (Id) at 25°C for the NTMS4706NR2G is 6.4A (Ta).
The maximum on-resistance (Rds On) is 12mOhm at a drain current of 10.3A and gate-source voltage of 10V.
The operating temperature range for the NTMS4706NR2G is -55°C to 150°C (TJ).
The NTMS4706NR2G is an N-Channel MOSFET.
The NTMS4706NR2G is supplied in an 8-SOIC package for surface mounting.