| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
139 pcs
|
139 pcs | On Request | 1 | On Request | On Request | 1201+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMS4176PR2G is a P-Channel Power MOSFET manufactured by ON Semiconductor. It features a drain-to-source voltage (Vdss) of -30V and a continuous drain current of 5.5A at 25°C ambient temperature.
This MOSFET offers low Rds(on) to minimize conduction losses, with a maximum value of 18mOhm at 9.6A and 10V gate-source voltage. It also has optimized gate charge for minimized switching losses and low capacitance. The operating junction temperature ranges from -55°C to +150°C.
Designed for surface mounting, the NTMS4176PR2G utilizes an 8-SOIC package, saving valuable board space. Its features make it suitable for applications such as load switches in notebook and desktop PCs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-30 V
5.5A
18mOhm
-55°C to +150°C
8-SOIC (0.154", 3.90mm Width)
RoHS3 Compliant
1 Unlimited