NTMS4107NR2G The NTMS4107NR2G is an N-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage and 11A continuous current, housed in an 8-SOIC package.
Mfr Part #:

NTMS4107NR2G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTMS4107NR2G is an N-Channel MOSFET from ON Semiconductor. It features a 30V drain-source voltage and 11A continuous current, housed in an 8-SOIC package.
✓ Total Stock: 18,973 pcs
$ Price Range: $0.99

NTMS4107NR2G Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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9,776 pcs
9776 pcs On Request 1 On Request On Request 10+ On Request On Request
Non-Authorised Inventory information
9,057 pcs
9057 pcs On Request 1 On Request On Request 10+ On Request On Request
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140 pcs
140 pcs On Request 1 On Request On Request 07+38 On Request On Request

NTMS4107NR2G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMS4107NR2G Description

Short technical summary and product information.

The NTMS4107NR2G is a single N-Channel MOSFET manufactured by ON Semiconductor. It is designed for surface mount applications and comes in an 8-SOIC package.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 30V and a continuous drain current of 11A at ambient temperature. The on-resistance (Rds On) is a maximum of 4.5mOhm at 15A and 10V gate-source voltage. The gate threshold voltage (Vgs(th)) is 2.5V maximum at 250µA, and the maximum gate-source voltage is ±20V. Input capacitance (Ciss) is 6000pF maximum at 15V drain-source voltage.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a power dissipation of 930mW maximum at ambient temperature. The technology used is Metal Oxide Semiconductor Field-Effect Transistor (MOSFET).

 

This component is suitable for various power management applications where a reliable N-channel MOSFET is required. Its surface mount package facilitates integration into compact electronic designs.

NTMS4107NR2G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTMS4107NR2G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMS4107NR2G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMS4107NR2G Features

  • 30V drain-source voltage rating.
  • 11A continuous drain current.
  • 4.5mOhm maximum on-resistance.
  • Surface mount 8-SOIC package.
  • Operates from -55°C to 150°C.

NTMS4107NR2G Applications

  • Used in power switching circuits
  • Suitable for motor control applications
  • Ideal for load switching in power supplies
  • Applicable in automotive electronic systems

NTMS4107NR2G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the NTMS4107NR2G?

The maximum drain-source voltage (Vdss) for the NTMS4107NR2G is 30V.

What is the continuous drain current of the NTMS4107NR2G?

The continuous drain current is 11A at ambient temperature.

What is the on-resistance of the NTMS4107NR2G?

The maximum on-resistance (Rds On) is 4.5mOhm when the drain current is 15A and the gate-source voltage is 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTMS4107NR2G available in?

The NTMS4107NR2G is available in an 8-SOIC package for surface mounting.

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