| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
6,005 pcs
|
6005 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor NTMS10P02R2G is a P-Channel, Enhancement Mode MOSFET suitable for power management applications in portable and battery-powered devices such as cellular phones and PCMCIA cards. This device offers ultra low RDS(on) and higher efficiency, contributing to extended battery life.
Key electrical characteristics include a Drain-to-Source Voltage (Vdss) of 20V and a maximum continuous drain current of 8.8A at 25°C. The on-resistance is specified as 14mOhm at 10A and 4.5V gate-to-source voltage. The MOSFET operates within a temperature range of -55°C to +150°C.
Packaged in a miniature SOIC-8 surface mount package, the NTMS10P02R2G is designed for ease of integration into compact electronic designs. The device also features a high-speed, soft recovery diode and specified avalanche energy, enhancing its robustness in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTMS10P02R2G is 20 Vdc.
The maximum continuous drain current at 25°C is -10 A.
The Rds On (Max) is 14 mOhm at 10A and 4.5V Vgs.
The operating temperature range is -55°C to +150°C.
This MOSFET is supplied in an 8-SOIC package.