| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
9,000 pcs
|
9000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The NTMJST2D6N08HTXG is a power MOSFET designed for high-current switching applications. It offers a maximum drain-source voltage of 80V and a continuous drain current of 131.5A, with a typical gate charge of 68nC for efficient switching. The device has a maximum on-resistance of 2.8mΩ, minimizing conduction losses. Power dissipation is rated at 116W, and the operating junction temperature range is -55°C to 175°C. The MOSFET includes a body diode with a typical forward voltage of 0.82V. It is packaged in a TCPAK10 surface-mount package, suitable for automated assembly. This component is intended for use in power management, motor control, and DC-DC converter circuits where high efficiency and thermal performance are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
80V
TCPAK10 surface-mount package
-55°C to 175°C
131.5A
2.8mΩ
68nC
116W