NTMJS1D5N04CLTWG The On Semiconductor NTMJS1D5N04CLTWG is an N-Channel MOSFET designed for efficient power management. It offers a 40V drain-source voltage and high current handling capabilities.
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NTMJS1D5N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMJS1D5N04CLTWG is an N-Channel MOSFET designed for efficient power management. It offers a 40V drain-source voltage and high current handling capabilities.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

NTMJS1D5N04CLTWG Available from 1 distributor

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NTMJS1D5N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMJS1D5N04CLTWG Description

Short technical summary and product information.

The NTMJS1D5N04CLTWG from On Semiconductor is a single N-Channel Power MOSFET. It features a drain-to-source voltage of 40V and a maximum continuous drain current of 200A at 25°C case temperature, and 38A at 25°C ambient temperature. The device boasts low on-resistance, specified at 1.4 mOhm at 50A and 10V gate-source voltage, minimizing conduction losses.

 

Designed for compact applications, this MOSFET utilizes the LFPAK8 package, an industry-standard small footprint measuring 5x6 mm. It operates within a wide temperature range of -55°C to 175°C. Key electrical characteristics include a gate threshold voltage of 2V maximum at 130µA and a gate-to-source voltage range of ±20V. The input capacitance is 4300 pF at 20V, and the gate charge is 70 nC at 10V, contributing to minimized driver losses.

 

This device is Pb-free and RoHS compliant. Its thermal performance is supported by a junction-to-case thermal resistance of 1.4 °C/W and a junction-to-ambient thermal resistance of 36 °C/W when mounted on a 650 mm² FR4 board with 2 oz. Cu pad. The maximum power dissipation is 110W at 25°C case temperature and 3.8W at 25°C ambient temperature.

NTMJS1D5N04CLTWG Quick Information

Product Type: N-Channel MOSFET
Series: NTMJS1D5N04CLTWG
Canonical Name: NTMJS1D5N04CLTWG
Subcategory: N-Channel

NTMJS1D5N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMJS1D5N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMJS1D5N04CLTWG Features

  • 40V drain-source voltage rating.
  • Low Rds(on) of 1.4mOhm at 10Vgs.
  • High continuous drain current.
  • Compact 5x6 mm LFPAK8 package.
  • Pb-free and RoHS compliant.

NTMJS1D5N04CLTWG Applications

  • Efficient power switching applications.
  • Compact power management designs.
  • Low conduction loss circuits.
  • Reduced driver loss applications.

NTMJS1D5N04CLTWG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMJS1D5N04CLTWG?

The maximum drain-to-source voltage (Vdss) is 40 V.

What is the Rds On (Max) for this N-Channel MOSFET?

The Rds On (Max) is 1.4 mOhm at a drain current of 50A and gate-source voltage of 10V.

What is the continuous drain current handling capability?

It can handle 200A continuous drain current at 25°C case temperature and 38A at 25°C ambient temperature.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTMJS1D5N04CLTWG supplied in?

The device is supplied in the 8-LFPAK package, also referred to as SOT-1205 or 8-LFPAK56.

Is the NTMJS1D5N04CLTWG RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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