NTMJS1D4N06CLTWG The ON Semiconductor NTMJS1D4N06CLTWG is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and high current capabilities.
Mfr Part #:

NTMJS1D4N06CLTWG

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMJS1D4N06CLTWG is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and high current capabilities.
✓ Total Stock: 3,590 pcs
$ Price Range: $0.99

NTMJS1D4N06CLTWG Available from 2 distributors

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✓ Non-Authorised
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2,590 pcs
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NTMJS1D4N06CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMJS1D4N06CLTWG Description

Short technical summary and product information.

The NTMJS1D4N06CLTWG from ON Semiconductor is a high-performance N-Channel MOSFET. It features a drain-to-source voltage of 60V and a maximum continuous drain current of 262A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 1.3mOhm at 10V Vgs, minimizing conduction losses. It also offers low gate charge and capacitance, reducing driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in the industry-standard LFPAK8 (SOT-1205, 8-LFPAK56), it is suitable for surface mounting. The small footprint design is ideal for compact applications. This device is Pb-free and RoHS compliant.

 

Key electrical characteristics include a gate threshold voltage of 2V at 280µA and a gate-to-source voltage range of ±20V. It also provides a pulsed drain current capability of 900A.

NTMJS1D4N06CLTWG Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET, 60V, 262A
Subcategory: N-Channel

NTMJS1D4N06CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMJS1D4N06CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMJS1D4N06CLTWG Features

  • 60V drain-source voltage rating.
  • High continuous drain current.
  • Low on-resistance for efficiency.
  • Compact LFPAK8 package.
  • Wide operating temperature range.

NTMJS1D4N06CLTWG Applications

  • Suitable for high-power switching.
  • Ideal for compact power designs.
  • Used in power management circuits.
  • Efficient conduction loss minimization.

NTMJS1D4N06CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTMJS1D4N06CLTWG?

The drain-to-source voltage is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 262A at 25°C case temperature and 39A at 25°C ambient temperature.

What is the on-resistance of this MOSFET?

The on-resistance is a maximum of 1.3mOhm at 50A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to 175°C.

What package type is the NTMJS1D4N06CLTWG in?

It is supplied in the 8-LFPAK package, also known as SOT-1205, 8-LFPAK56.

Is this MOSFET RoHS compliant?

Yes, this device is RoHS compliant.

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