NTMJS1D2N04CLTWG The On Semiconductor NTMJS1D2N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a continuous drain current of 237A at 25°C case temperature.
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NTMJS1D2N04CLTWG

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMJS1D2N04CLTWG is an N-Channel MOSFET with a 40V drain-source voltage. It offers a continuous drain current of 237A at 25°C case temperature.
✓ Total Stock: 12,000 pcs
$ Price Range: $0.99

NTMJS1D2N04CLTWG Available from 1 distributor

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✓ Non-Authorised
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NTMJS1D2N04CLTWG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMJS1D2N04CLTWG Description

Short technical summary and product information.

This N-Channel MOSFET from On Semiconductor, part number NTMJS1D2N04CLTWG, is designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 40V and a continuous drain current rating of 237A when measured at a case temperature of 25°C, and 168A at 100°C. The device exhibits a low on-resistance (Rds(on)) of 1.2mΩ at 10V gate-source voltage and 50A drain current, minimizing conduction losses.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) ranging from 1.2V to 2V at 170µA. The input capacitance (Ciss) is 5600pF at 25V, and the gate charge (Qg) is 93nC at 10V, contributing to minimized driver losses. The operating junction and storage temperature range is from -55°C to +175°C.

 

The NTMJS1D2N04CLTWG is housed in an 8-LFPAK package, specifically SOT-1205, 8-LFPAK56, suitable for surface mounting. This package offers a small footprint for compact designs. The device is Pb-Free and RoHS Compliant, making it suitable for various electronic applications requiring efficient power management.

NTMJS1D2N04CLTWG Quick Information

Product Type: MOSFET
Canonical Name: On Semiconductor NTMJS1D2N04CLTWG N-Channel MOSFET

NTMJS1D2N04CLTWG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMJS1D2N04CLTWG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMJS1D2N04CLTWG Features

  • 40V drain-to-source voltage rating.
  • High continuous drain current capability.
  • Low on-resistance for minimal losses.
  • Compact 8-LFPAK surface mount package.
  • Wide operating temperature range.

NTMJS1D2N04CLTWG Applications

  • Suitable for power management circuits.
  • Ideal for compact electronic designs.
  • Used in applications requiring high efficiency.
  • Designed for robust thermal performance.

NTMJS1D2N04CLTWG FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMJS1D2N04CLTWG MOSFET?

The maximum drain-to-source voltage (Vdss) is 40V.

What is the continuous drain current at 25°C case temperature?

The continuous drain current is 237A at a case temperature of 25°C.

What is the maximum on-resistance (Rds) at 10V gate-source voltage?

The maximum on-resistance is 1.2mΩ when measured at 50A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTMJS1D2N04CLTWG MOSFET supplied in?

It is supplied in an 8-LFPAK package, specifically SOT-1205, 8-LFPAK56.

Is the NTMJS1D2N04CLTWG RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

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