BAT54JFILM-HQ
STMicroelectronics
The STMicroelectronics BAT54JFILM-HQ is a Schottky diode array designed for surface mount applications. It offers a 40V reverse voltage and 200mA average rectified current per diode.
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24,000 pcs
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24000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTMFSC006N12MC from ON Semiconductor is a high-performance N-Channel Power MOSFET. It is engineered for demanding applications such as primary DC-DC FET and synchronous rectification.
Key electrical characteristics include a maximum drain-to-source voltage of 120V and a low on-resistance of 6.1 mΩ at a gate-to-source voltage of 10V. Continuous drain current ratings are 92A at 25°C case temperature and 57A at 100°C case temperature. Power dissipation is rated at 104W at 25°C case temperature.
This MOSFET features advanced dual-sided cooling packaging for enhanced thermal performance. It operates within a junction and storage temperature range of -55°C to +150°C. The device is supplied in a DFN8 package suitable for surface mounting.
Typical applications include DC-DC converters and power management circuits where efficiency and thermal handling are critical. Its robust design and specifications make it a reliable choice for power electronics designs.
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (VDS) is 120V, and the gate-to-source voltage (VGS) is ±20V.
It is housed in a DFN8 surface-mount package.
The maximum junction and storage temperature is +150°C.
At TC = 25°C steady state, the maximum continuous drain current is 92A. At TA = 25°C, it is 14A.
The maximum on-resistance (RDS(on)) is 6.1 mΩ at VGS = 10V.
The junction-to-case thermal resistance (steady state) is 1.2 °C/W.
The maximum pulsed drain current (tp=10 µs, TC=25°C) is 1459A.