| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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16,500 pcs
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16500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NTMFS6H864NLT1G, is designed for power applications requiring high efficiency and a compact footprint. It offers a drain-to-source voltage (Vds) of 80V and a maximum continuous drain current (Id) of 22A at 25°C case temperature.
The MOSFET exhibits a low on-resistance (Rds(on)) of 29mOhm at 5A drain current and 10V gate-to-source voltage, minimizing conduction losses. Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 20µA and a gate charge (Qg) of 9nC at 10V Vgs, contributing to reduced driver losses.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, this device is suitable for space-constrained designs. It operates across a wide temperature range of -55°C to 175°C (TJ). The device is Pb-Free and RoHS Compliant.
With a power dissipation capability of 33W at 25°C case temperature and 3.5W at 25°C ambient temperature, it is engineered for reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 80 V.
The maximum continuous drain current is 22 A when measured at the case temperature of 25°C.
The Rds(on) is a maximum of 29mOhm at 5A drain current and 10V gate-to-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, the NTMFS6H864NLT1G is RoHS3 Compliant and Pb-Free.