| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Supplier Device Package | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS6H836NT1G from ON Semiconductor is a high-performance N-Channel MOSFET. It is designed with a small footprint, measuring 5x6 mm, making it suitable for compact designs. This MOSFET features a drain-to-source voltage (Vdss) of 80V and a low Rds(on) of 6.7mOhm at 15A and 10V gate drive, which helps minimize conduction losses.
Key electrical characteristics include a continuous drain current of 15A at 25°C ambient temperature and 74A at 25°C case temperature. It also boasts low gate charge (Qg) and capacitance (Ciss) to minimize driver losses. The device operates over a wide temperature range from -55°C to +175°C.
Packaged in an 8-PowerTDFN, 5-lead (5-DFN 5x6) surface-mount package, the NTMFS6H836NT1G is suitable for various power management applications where efficiency and space are critical. It is Pb-free and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80V.
The maximum continuous drain current is 15A at 25°C ambient temperature and 74A at 25°C case temperature.
The Rds(on) is a maximum of 6.7mOhm at 15A drain current and 10V gate-source voltage.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package (5-DFN 5x6).
Yes, the device is RoHS compliant.