| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,645 pcs
|
2645 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS6H818NT1G is a high-performance N-Channel MOSFET designed by On Semiconductor. It offers a drain-to-source voltage (Vdss) of 80V and a low on-resistance (Rds On) of 3.7mOhm at 20A and 10V gate drive. This device is capable of handling continuous drain currents of up to 123A at case temperature and 20A at ambient temperature.
Key electrical characteristics include a gate threshold voltage of 4V (max) at 190µA and a gate-to-source voltage range of ±20V. The MOSFET also features a gate charge (Qg) of 46nC (max) at 10V and an input capacitance (Ciss) of 3100pF (max) at 40V.
Designed for efficiency, the NTMFS6H818NT1G minimizes conduction and driver losses. It operates within a wide temperature range of -55°C to 175°C (TJ). The device is housed in a small 5x6mm 8-PowerTDFN (5-DFN) surface-mount package, making it suitable for compact designs.
This MOSFET is Pb-free and RoHS compliant, aligning with environmental standards. Its robust construction and specifications make it suitable for various power management applications where efficiency and space are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.51 | $3.51 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80 V.
The maximum on-resistance is 3.7mOhm at 20A and 10V gate drive.
The continuous drain current is 123A at case temperature and 20A at ambient temperature.
The operating junction and storage temperature range is -55°C to +175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) size, designed for surface mounting.
Yes, the device is RoHS3 compliant and also Pb-free.