| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,209 pcs
|
3209 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This N-Channel MOSFET from On Semiconductor, part number NTMFS6H800NT1G, is designed for efficient power management. It features a high drain-to-source voltage rating of 80V and can handle a continuous drain current of 203A at 25°C case temperature, with a lower rating of 28A at 25°C ambient temperature.
The MOSFET boasts a low on-resistance of 2.1mOhm at 10V gate-source voltage and 50A drain current, minimizing conduction losses. Its gate threshold voltage is a maximum of 4V at 330µA, and it operates within a wide temperature range of -55°C to 175°C.
Packaged in a compact 5x6mm 5-lead DFN (8-SOFL) surface mount package, the NTMFS6H800NT1G is suitable for space-constrained designs. It also features a low input capacitance and gate charge, contributing to reduced driver losses in switching applications.
Key electrical characteristics include a maximum gate-to-source voltage of ±20V and a maximum power dissipation of 200W at 25°C case temperature. The device is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 80V.
The maximum continuous drain current is 203A when measured at the case temperature (Tc) of 25°C, and 28A when measured at the ambient temperature (Ta) of 25°C.
The maximum drain-to-source on-resistance is 2.1mOhm at a drain current of 50A and a gate-source voltage of 10V.
The operating junction and storage temperature range is from -55°C to 175°C.
It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.