NTMFS5H630NLT1G The ON Semiconductor NTMFS5H630NLT1G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and low on-resistance.
Mfr Part #:

NTMFS5H630NLT1G

Available from 3 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS5H630NLT1G is an N-Channel MOSFET designed for power applications. It offers a 60V drain-source voltage and low on-resistance.
✓ Total Stock: 20,584 pcs
$ Price Range: $0.99

NTMFS5H630NLT1G Available from 3 distributors

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19,500 pcs
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1,000 pcs
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NTMFS5H630NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS5H630NLT1G Description

Short technical summary and product information.

The ON Semiconductor NTMFS5H630NLT1G is a power MOSFET featuring an N-channel configuration. It is designed with a 60V drain-to-source voltage (Vdss) and a low on-resistance of 3.1mOhm at 10V gate-source voltage and 20A drain current. This device can handle a continuous drain current of up to 120A when measured at the case temperature (Tc) of 25°C, and 22A when measured at an ambient temperature (Ta) of 25°C. Its power dissipation is rated at 89W (Tc) and 3.1W (Ta) at 25°C.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V maximum at 130µA and a gate-to-source voltage (Vgs) range of ±20V. Input capacitance (Ciss) is 2540pF at 30V, and gate charge (Qg) is 35nC at 10V. The MOSFET operates within a junction and storage temperature range of -55°C to +150°C.

 

Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount configuration, the NTMFS5H630NLT1G is suitable for compact designs. It offers ESD protection levels exceeding 1kV (HBM), 200V (MM), and 2kV (CDM). The device is Pb-free and RoHS compliant.

NTMFS5H630NLT1G Quick Information

Product Type: MOSFET
Series: NTMFS5H630NLT1G
Canonical Name: NTMFS5H630NL N-Channel MOSFET
Subcategory: MOSFET

NTMFS5H630NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS5H630NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS5H630NLT1G Features

  • 60V drain-to-source voltage rating.
  • Low 3.1mOhm Rds(on) at 10V.
  • High 120A continuous drain current.
  • Compact 5x6mm DFN package.
  • Pb-free and RoHS compliant.

NTMFS5H630NLT1G Applications

  • Suitable for power switching applications.
  • Ideal for compact power designs.
  • Used in high current systems.
  • Efficient conduction loss minimization.

NTMFS5H630NLT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTMFS5H630NLT1G?

The drain-to-source voltage (Vdss) is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 120A when measured at the case temperature (Tc) of 25°C, and 22A when measured at an ambient temperature (Ta) of 25°C.

What is the on-resistance of the NTMFS5H630NLT1G?

The on-resistance (Rds(on)) is a maximum of 3.1mOhm at 20A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the NTMFS5H630NLT1G supplied in?

It is supplied in an 8-PowerTDFN, 5-lead (5x6mm) surface mount package.

Is the NTMFS5H630NLT1G RoHS compliant?

Yes, the device is Pb-free and RoHS compliant.

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