| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,300 pcs
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1300 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Vgs (Max) | |
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This N-Channel MOSFET from On Semiconductor, part number NTMFS5H425NLT1G, is designed for power management applications. It offers a maximum drain-to-source voltage of 40V and a low on-resistance of 2.8mOhm at 20A and 10V gate drive.
The device supports a continuous drain current of up to 118A at 25°C case temperature, with a maximum power dissipation of 69W under the same conditions. At ambient temperature, it can handle 25A with a power dissipation of 3W.
Key electrical characteristics include a gate threshold voltage of 2V at 250µA and an input capacitance of 1950pF at 20V. The operating temperature range is from -55°C to 150°C.
Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount package, this MOSFET is suitable for compact designs. It is RoHS3 compliant and has a Moisture Sensitivity Level of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 40V.
The typical on-resistance is 2.8mOhm at 20A and 10V gate drive.
The continuous drain current is 118A at 25°C case temperature and 25A at 25°C ambient temperature.
The operating junction and storage temperature range is -55°C to +150°C.
It is supplied in an 8-PowerTDFN, 5-lead package with a surface mount type.
Yes, the device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.