| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Supplier Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS5C646NT1G from ON Semiconductor is a high-performance N-channel MOSFET designed for power applications. It offers a drain-source voltage (Vdss) of 60V and can handle continuous currents of 20A (at ambient temperature) and up to 93A (at case temperature).
Key electrical characteristics include a maximum on-resistance (Rds On) of 5mOhm when driven at 16A and 10V gate-source voltage. The gate charge (Qg) is 19.2 nC maximum at 10V, and input capacitance (Ciss) is 1500 pF maximum at 10V.
This MOSFET operates within a temperature range of -55°C to 175°C (TJ). It is housed in an 8-PowerTDFN, 5-lead package, designed for surface mounting. The supplier device package is specified as 5-DFN (5x6) (8-SOFL).
Compliance information indicates RoHS3 compliance and an MSL of 1.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTMFS5C646NT1G is 60V.
The maximum on-resistance (Rds On) is 5mOhm at 16A and 10V.
The operating temperature range is -55°C to 175°C (TJ).
It is supplied in an 8-PowerTDFN, 5-lead package.
Yes, it is RoHS3 compliant.
The Moisture Sensitivity Level (MSL) is 1.