| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,232 pcs
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2232 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS5C442NLTWFT1G is a single N-Channel MOSFET manufactured by ON Semiconductor. This component is designed for surface mount applications and comes in an 8-PowerTDFN, 5-lead package.
Key electrical specifications include a drain-to-source voltage (Vdss) of 40V and a continuous current rating of 28A at ambient temperature (Ta). The gate threshold voltage (Vgs(th)) is a maximum of 2V at 250µA, with a maximum gate-to-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is rated at 3100 pF at 25V, and gate charge (Qg) is a maximum of 50 nC at 10V.
This MOSFET offers a maximum on-resistance (Rds On) of 2.5mOhm at 50A and 10V, with drive voltages specified between 4.5V and 10V. The maximum power dissipation is 3.7W at ambient temperature (Ta). The operating temperature range is from -55°C to 175°C (TJ).
Designed with MOSFET (Metal Oxide) technology, the NTMFS5C442NLTWFT1G is suitable for various power management and switching applications where a reliable N-channel MOSFET is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 40V.
The maximum continuous current is 28A at ambient temperature.
The package type is 8-PowerTDFN, 5 Leads, and it is a Surface Mount device.
The operating temperature range is -55°C to 175°C (TJ).
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.