NTMFS5C410NLTT1G The On Semiconductor NTMFS5C410NLTT1G is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and high current handling capabilities.
Mfr Part #:

NTMFS5C410NLTT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMFS5C410NLTT1G is an N-Channel MOSFET designed for power applications. It offers a 40V drain-to-source voltage and high current handling capabilities.
✓ Total Stock: 8,065 pcs
$ Price Range: $0.99

NTMFS5C410NLTT1G Available from 2 distributors

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✓ Non-Authorised
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7,065 pcs
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1,000 pcs
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NTMFS5C410NLTT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS5C410NLTT1G Description

Short technical summary and product information.

This N-Channel MOSFET from On Semiconductor, part number NTMFS5C410NLTT1G, is designed for efficient power management. It features a maximum drain-to-source voltage (Vdss) of 40V and can handle a continuous drain current of up to 330A at a case temperature of 25°C, and 50A at an ambient temperature of 25°C.

 

The MOSFET boasts a low on-resistance (Rds On) of 0.9mOhm at 50A and 10Vgs, minimizing conduction losses. It also features low gate charge (Qg) and capacitance, contributing to reduced driver losses. The device operates within a wide temperature range of -55°C to 175°C.

 

Packaged in an 8-PowerTDFN, 5-lead (5x6mm) surface-mount package, the NTMFS5C410NLTT1G is suitable for compact designs. Its construction includes Pb-free and halogen-free materials, adhering to RoHS compliance standards.

 

Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2V at 250µA and an input capacitance (Ciss) of 8862pF at 25V. The thermal resistance from junction to case is 0.9°C/W, and from junction to ambient is 39°C/W.

NTMFS5C410NLTT1G Quick Information

Product Type: MOSFET
Canonical Name: N-Channel MOSFET
Subcategory: Single

NTMFS5C410NLTT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS5C410NLTT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS5C410NLTT1G Features

  • 40V drain-to-source voltage rating.
  • High continuous drain current capability.
  • Low on-resistance minimizes conduction losses.
  • Compact 5x6mm 5-DFN surface-mount package.
  • Wide operating temperature range.

NTMFS5C410NLTT1G Applications

  • Suitable for high-power switching applications.
  • Ideal for efficient power management circuits.
  • Used in compact electronic designs.
  • Designed for demanding thermal environments.

NTMFS5C410NLTT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTMFS5C410NLTT1G?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum continuous drain current for the NTMFS5C410NLTT1G?

The maximum continuous drain current is 330A when measured at the case temperature (Tc) of 25°C, and 50A when measured at the ambient temperature (Ta) of 25°C.

What is the Rds On (Max) for this MOSFET?

The Rds On (Max) is 0.9mOhm at a drain current of 50A and gate-source voltage of 10V.

What is the operating temperature range?

The operating junction and storage temperature range is -55°C to +175°C.

What package type is the NTMFS5C410NLTT1G in?

It is in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) size, and is surface mounted.

Is this MOSFET RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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