NTMFS5832NLT1G The On Semiconductor NTMFS5832NLT1G is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers a continuous drain current of up to 111A (Tc) and a low on-resistance of 4.2mOhm at 10V Vgs.
Mfr Part #:

NTMFS5832NLT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMFS5832NLT1G is an N-Channel MOSFET with a 40V drain-to-source voltage. It offers a continuous drain current of up to 111A (Tc) and a low on-resistance of 4.2mOhm at 10V Vgs.
✓ Total Stock: 3,106 pcs
$ Price Range: $0.99

NTMFS5832NLT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
3,101 pcs
3101 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
5 pcs
5 pcs On Request 1 On Request On Request On Request On Request On Request

NTMFS5832NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS5832NLT1G Description

Short technical summary and product information.

The NTMFS5832NLT1G is a power MOSFET from On Semiconductor designed for efficient power management. It features a 40V drain-to-source voltage and an N-channel configuration.

 

Key electrical characteristics include a maximum continuous drain current of 111A at 25°C case temperature and 20A at 25°C ambient temperature. The on-resistance is rated at a low 4.2mOhm at 10V gate-to-source voltage, minimizing conduction losses. It also boasts optimized gate charge for reduced switching losses and low capacitance.

 

This MOSFET operates within a wide temperature range of -55°C to 150°C. It is housed in a compact 5-DFN (5x6) package, also known as 8-PowerTDFN, suitable for surface mounting.

 

The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for various environmental regulations.

NTMFS5832NLT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFS5832NLT1G N-Channel MOSFET
Subcategory: N-Channel

NTMFS5832NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS5832NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS5832NLT1G Features

  • 40V drain-to-source voltage rating.
  • 111A maximum continuous drain current.
  • Low 4.2mOhm on-resistance.
  • Wide -55°C to 150°C operating temperature.
  • Compact 5-DFN surface-mount package.

NTMFS5832NLT1G Applications

  • Optimized for low conduction losses.
  • Designed for minimal driver losses.
  • Suitable for minimizing switching losses.
  • Power management applications.

NTMFS5832NLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTMFS5832NLT1G?

The drain-to-source voltage (Vdss) is 40V.

What is the maximum continuous drain current for the NTMFS5832NLT1G?

The maximum continuous drain current is 111A when measured at the case temperature (Tc = 25°C).

What is the on-resistance of the NTMFS5832NLT1G?

The on-resistance (Rds(on)) is a maximum of 4.2mOhm at 20A drain current and 10V gate-to-source voltage.

What is the operating temperature range for this MOSFET?

The operating junction and storage temperature range is -55°C to +150°C.

What package type is the NTMFS5832NLT1G supplied in?

It is supplied in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN or SO-8FL.

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