| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,361 pcs
|
1361 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Lead Style | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMFS4H02NFT1G is a single N-Channel MOSFET designed for high-performance applications. It features a drain-to-source voltage (Vdss) of 25V and can handle a continuous drain current of up to 193A at 25°C case temperature, with a power dissipation of 83W at 25°C case temperature.
This MOSFET has a maximum gate-to-source voltage of ±20V and a gate threshold voltage of 2.1V at 250µA. The on-resistance (Rds On) is as low as 1.4mOhm at 30A and 10V gate-to-source voltage. Input capacitance (Ciss) is 2652 pF at 12V.
Packaged in an 8-PowerTDFN, 5-lead (5x6) SOFL package, the NTMFS4H02NFT1G is designed for surface mounting. It operates at a maximum junction temperature of 150°C. The device is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTMFS4H02NFT1G is 25V.
The NTMFS4H02NFT1G has a continuous drain current of 37A at 25°C ambient temperature and 193A at 25°C case temperature.
The maximum power dissipation for the NTMFS4H02NFT1G is 3.13W at 25°C ambient temperature and 83W at 25°C case temperature.
The maximum operating junction temperature (TJ) for the NTMFS4H02NFT1G is 150°C.
The NTMFS4H02NFT1G is in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
The NTMFS4H02NFT1G is a surface mount device.