NTMFS4H01NFT1G The ON Semiconductor NTMFS4H01NFT1G is an N-Channel MOSFET designed for high-performance applications. It features a 25V Drain-Source Voltage and a low on-resistance.
Mfr Part #:

NTMFS4H01NFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS4H01NFT1G is an N-Channel MOSFET designed for high-performance applications. It features a 25V Drain-Source Voltage and a low on-resistance.
✓ Total Stock: 735 pcs
$ Price Range: $0.99

NTMFS4H01NFT1G Available from 1 distributor

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735 pcs
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NTMFS4H01NFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS4H01NFT1G Description

Short technical summary and product information.

The ON Semiconductor NTMFS4H01NFT1G is a power MOSFET with an N-Channel configuration, designed for efficient power management in various electronic systems. It boasts a Drain-to-Source Voltage (Vdss) of 25V and a maximum continuous drain current of 54A at 25°C ambient temperature, or 334A at 25°C case temperature.

 

Key electrical characteristics include a low maximum on-resistance of 0.7mOhm at 30A and 10V gate-source voltage, and a gate threshold voltage of 2.1V at 250µA. The device also features a maximum gate charge of 82nC at 10V.

 

With a maximum junction temperature of 150°C and a power dissipation of 3.2W (Ta) or 125W (Tc), this MOSFET is suitable for demanding applications. It is housed in an 8-PowerTDFN, 5-Lead (5-DFN 5x6 / 8-SOFL) package, designed for surface mounting.

 

This MOSFET is Pb-Free and Halogen Free, complying with RoHS standards. Its optimized design aims to minimize conduction and switching losses, making it ideal for high-performance DC-DC converters, system voltage rails, netcom, telecom, servers, and point-of-load applications.

NTMFS4H01NFT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFS4H01NFT1G N-Channel MOSFET
Subcategory: N-Channel

NTMFS4H01NFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS4H01NFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4H01NFT1G Features

  • 25V Drain-to-Source Voltage rating.
  • 54A continuous drain current capability.
  • Low 0.7mOhm maximum on-resistance.
  • 150°C maximum junction temperature.
  • Surface mount 8-PowerTDFN package.

NTMFS4H01NFT1G Applications

  • Suitable for DC-DC converters.
  • Used in system voltage rails.
  • Applicable for netcom and telecom.
  • Ideal for server power supplies.
  • Designed for point-of-load applications.

NTMFS4H01NFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the Drain-to-Source Voltage (Vdss) of the NTMFS4H01NFT1G?

The Drain-to-Source Voltage (Vdss) is 25V.

What is the maximum continuous drain current for the NTMFS4H01NFT1G?

The maximum continuous drain current is 54A at 25°C ambient temperature and 334A at 25°C case temperature.

What is the maximum on-resistance (Rds On) of the NTMFS4H01NFT1G?

The maximum on-resistance is 0.7mOhm at a drain current of 30A and gate-source voltage of 10V.

What is the operating temperature range for the NTMFS4H01NFT1G?

The maximum junction temperature is 150°C.

What type of package is the NTMFS4H01NFT1G in?

The NTMFS4H01NFT1G is in an 8-PowerTDFN, 5-Lead package, designed for surface mounting.

Is the NTMFS4H01NFT1G RoHS compliant?

Yes, the NTMFS4H01NFT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTMFS4H01NFT1G?

The Moisture Sensitivity Level (MSL) is 1.

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