NTMFS4H013NFT1G The On Semiconductor NTMFS4H013NFT1G is an N-Channel MOSFET with a 25V drain-to-source voltage. It offers high continuous drain current capabilities and low on-resistance.
Mfr Part #:

NTMFS4H013NFT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMFS4H013NFT1G is an N-Channel MOSFET with a 25V drain-to-source voltage. It offers high continuous drain current capabilities and low on-resistance.
✓ Total Stock: 4,047 pcs
$ Price Range: $0.99

NTMFS4H013NFT1G Available from 1 distributor

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✓ Non-Authorised
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NTMFS4H013NFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS4H013NFT1G Description

Short technical summary and product information.

The NTMFS4H013NFT1G from On Semiconductor is a single N-Channel MOSFET designed for power applications. It features a maximum drain-to-source voltage of 25V and a continuous drain current rating of 269A at 25°C case temperature.

 

This MOSFET boasts a low on-resistance of 0.9mOhm at 30A and 10V Vgs, contributing to minimized conduction losses. The gate charge is a maximum of 56nC at 10V Vgs, and the input capacitance is 3923pF at 12V Vds. The maximum junction temperature is 150°C.

 

Packaged in an 8-PowerTDFN, 5-lead (5x6) SOFL package, the NTMFS4H013NFT1G is designed for surface mounting. It operates at a maximum junction temperature of 150°C and is Pb-free and Halogen-free compliant.

 

Applications include high-performance DC-DC converters, system voltage rails, Netcom, Telecom, and servers. Its optimized design aims to minimize conduction and switching losses, with an optimized package for reduced parasitic inductances and improved thermal performance.

NTMFS4H013NFT1G Quick Information

Product Type: MOSFET
Series: NTMFS4H013NFT1G
Canonical Name: N-Channel MOSFET
Subcategory: N-Channel

NTMFS4H013NFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

NTMFS4H013NFT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4H013NFT1G Features

  • 25V drain-to-source voltage rating.
  • 269A maximum continuous drain current.
  • 0.9mOhm maximum on-resistance.
  • Surface mountable 8-PowerTDFN package.
  • Pb-free and Halogen-free compliant.

NTMFS4H013NFT1G Applications

  • High performance DC-DC converters.
  • System voltage rail applications.
  • Netcom and Telecom infrastructure.
  • Server power supplies.
  • Point of load applications.

NTMFS4H013NFT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMFS4H013NFT1G?

The maximum drain-to-source voltage is 25V.

What is the continuous drain current of the NTMFS4H013NFT1G?

The continuous drain current is 43A at 25°C ambient and 269A at 25°C case temperature.

What is the maximum on-resistance of the NTMFS4H013NFT1G?

The maximum on-resistance is 0.9mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range for this MOSFET?

The maximum junction temperature is 150°C.

What package type is the NTMFS4H013NFT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead package designed for surface mounting.

Is the NTMFS4H013NFT1G RoHS compliant?

Yes, it is RoHS3 compliant.

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