| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
14,117 pcs
|
14117 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS4C808NAT3G from ON Semiconductor is an N-Channel MOSFET belonging to the TRENCH 6 technology family. It offers a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of up to 9A at 25°C ambient temperature, or 52A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance (Rds On) of 4.8mOhm at 18A and 10Vgs, and a gate charge (Qg) of 18.2nC maximum at 10Vgs. The gate-to-source voltage (Vgs) is rated up to ±20V, with a threshold voltage (Vgs(th)) of 2.1V maximum at 250µA.
This MOSFET is housed in an 8-PowerTDFN, 5-lead package with a 5x6 footprint, designed for surface mounting. It operates within a temperature range of -55°C to 150°C (TJ). The part is specified with RoHS3 compliance and MSL 1 rating.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 30V.
The maximum gate-to-source voltage is ±20V.
The maximum continuous drain current is 9A.
It uses an 8-PowerTDFN, 5-lead surface mount package.
-55°C to 150°C.
RoHS3 compliant, but verification status is low.