NTMFS4C808NAT1G The On Semiconductor NTMFS4C808NAT1G is an N-Channel MOSFET featuring TRENCH 6 technology. It offers a 30V drain-source voltage and a continuous current rating of 9A.
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NTMFS4C808NAT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The On Semiconductor NTMFS4C808NAT1G is an N-Channel MOSFET featuring TRENCH 6 technology. It offers a 30V drain-source voltage and a continuous current rating of 9A.
✓ Total Stock: 16,500 pcs
$ Price Range: $0.99

NTMFS4C808NAT1G Available from 1 distributor

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NTMFS4C808NAT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS4C808NAT1G Description

Short technical summary and product information.

The NTMFS4C808NAT1G from On Semiconductor is an N-Channel MOSFET designed with TRENCH 6 technology. This component is suitable for various applications requiring efficient power switching.

 

Key electrical specifications include a maximum drain-source voltage (Vdss) of 30V and a continuous current rating of 9A at ambient temperature, and 52A at case temperature. The on-state resistance (Rds On) is as low as 4.8mOhm at 18A and 10V gate-source voltage. The threshold voltage (Vgs(th)) is 2.1V at 250µA, and the maximum gate charge (Qg) is 18.2 nC at 10V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It has a maximum power dissipation of 760mW at ambient temperature and 25.5W at case temperature. The maximum gate-source voltage is ±20V.

 

The NTMFS4C808NAT1G is packaged in an 8-PowerTDFN (5x6) configuration, designed for surface mounting. It adheres to RoHS3 compliance standards and has a Moisture Sensitivity Level (MSL) of 1.

NTMFS4C808NAT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFS4C808NAT1G N-Channel MOSFET
Subcategory: N-Channel

NTMFS4C808NAT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS4C808NAT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4C808NAT1G Features

  • N-Channel MOSFET with TRENCH 6 technology.
  • 30V drain-source voltage rating.
  • 9A continuous current capability.
  • Low 4.8mOhm Rds On at 18A, 10Vgs.
  • Surface mountable 8-PowerTDFN package.

NTMFS4C808NAT1G Applications

  • Used in power management circuits
  • Suitable for motor control applications
  • Ideal for high-current switching
  • Designed for compact electronic devices

NTMFS4C808NAT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage (Vdss) for the NTMFS4C808NAT1G?

The drain-source voltage (Vdss) for the NTMFS4C808NAT1G is 30V.

What is the continuous current rating of the NTMFS4C808NAT1G?

The continuous current rating is 9A at ambient temperature and 52A at case temperature.

What is the on-state resistance (Rds On) for this MOSFET?

The Rds On is a maximum of 4.8mOhm at 18A and 10V gate-source voltage.

What is the operating temperature range for the NTMFS4C808NAT1G?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTMFS4C808NAT1G in?

It is in an 8-PowerTDFN package with 5 leads, designed for surface mounting.

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