| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
This NTMFS4C805NT1G MOSFET from On Semiconductor is designed for power management applications. It is an N-channel MOSFET with a trench 6 technology, offering a 30V drain-to-source voltage (Vdss) and a maximum continuous drain current of 11.9A at ambient temperature.
The device boasts a low on-resistance (Rds On) of 2.8mOhm at 30A and 10V Vgs, ensuring efficient power transfer. Key electrical characteristics include a gate charge (Qg) of 30nC at 10V and input capacitance (Ciss) of 1972pF at 15V. The gate-to-source voltage (Vgs) maximum is ±20V, with a threshold voltage (Vgs(th)) of 2.2V at 250µA.
Operating within a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for demanding environments. It is housed in an 8-PowerTDFN, 5-lead package, designed for surface mounting. The supplier device package is specified as 5-DFN (5x6) (8-SOFL).
Environmental compliance includes RoHS3 compliance and an MSL rating of 1 (Unlimited). The REACH status is unaffected.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vdss) for the NTMFS4C805NT1G is 30V.
The maximum continuous drain current (Id) for the NTMFS4C805NT1G is 11.9A at ambient temperature.
The Rds On is a maximum of 2.8mOhm when measured at 30A drain current and 10V gate-source voltage.
The operating temperature range is -55°C to 150°C (TJ).
It is supplied in an 8-PowerTDFN, 5-lead package designed for surface mounting.