NTMFS4C324NT1G The ON Semiconductor NTMFS4C324NT1G is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 136A. It comes in an SO-8 package.
Mfr Part #:

NTMFS4C324NT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS4C324NT1G is an N-Channel MOSFET with a 30V drain-source breakdown voltage and a continuous drain current of 136A. It comes in an SO-8 package.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

NTMFS4C324NT1G Available from 1 distributor

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NTMFS4C324NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
SVHC Present
Tape & Reel

NTMFS4C324NT1G Description

Short technical summary and product information.

The ON Semiconductor NTMFS4C324NT1G is a high-performance N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 30V and a continuous drain current capability of 136A, making it suitable for power switching applications.

 

The MOSFET has a low drain-source on-resistance of 1.7 mOhms, contributing to efficient power transfer and reduced heat generation. The gate-source threshold voltage is 2.2V, and it operates within a wide temperature range from -55°C to +150°C.

 

Packaged in an SO-8 surface-mount case, the NTMFS4C324NT1G is designed for easy integration into printed circuit boards. The technology used is Silicon (Si), and it operates in enhancement mode. The device is supplied on a reel or in cut tape packaging, facilitating automated assembly processes.

NTMFS4C324NT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFS4C324NT1G N-Channel MOSFET
Subcategory: N-Channel

NTMFS4C324NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NTMFS4C324NT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4C324NT1G Features

  • 30V drain-source breakdown voltage.
  • 136A continuous drain current.
  • 1.7 mOhms drain-source on-resistance.
  • SO-8 surface-mount package.
  • Wide -55°C to +150°C operating temperature.

NTMFS4C324NT1G Applications

  • Suitable for power switching applications.
  • Ideal for efficient power transfer.
  • Designed for surface-mount integration.
  • Facilitates automated assembly processes.

NTMFS4C324NT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the NTMFS4C324NT1G?

The drain-source breakdown voltage is 30V.

What is the continuous drain current for the NTMFS4C324NT1G MOSFET?

The continuous drain current is 136A.

What is the Rds On for the NTMFS4C324NT1G?

The drain-source on-resistance is 1.7 mOhms.

What is the gate-source threshold voltage?

The gate-source threshold voltage is 2.2V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to +150°C.

What package type is the NTMFS4C324NT1G MOSFET?

The MOSFET is supplied in an SO-8 package.

What is the RoHS status of the NTMFS4C324NT1G?

The RoHS status is RoHS3 Compliant.

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