| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present | |
| Tape & Reel |
The ON Semiconductor NTMFS4C324NT1G is a high-performance N-Channel MOSFET designed for various electronic applications. It features a drain-source breakdown voltage of 30V and a continuous drain current capability of 136A, making it suitable for power switching applications.
The MOSFET has a low drain-source on-resistance of 1.7 mOhms, contributing to efficient power transfer and reduced heat generation. The gate-source threshold voltage is 2.2V, and it operates within a wide temperature range from -55°C to +150°C.
Packaged in an SO-8 surface-mount case, the NTMFS4C324NT1G is designed for easy integration into printed circuit boards. The technology used is Silicon (Si), and it operates in enhancement mode. The device is supplied on a reel or in cut tape packaging, facilitating automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 30V.
The continuous drain current is 136A.
The drain-source on-resistance is 1.7 mOhms.
The gate-source threshold voltage is 2.2V.
The operating temperature range is -55°C to +150°C.
The MOSFET is supplied in an SO-8 package.
The RoHS status is RoHS3 Compliant.