NTMFS4C302NT1G The ON Semiconductor NTMFS4C302NT1G is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of up to 230A. It features a low Rds On of 1.15mOhm at 10V.
Mfr Part #:

NTMFS4C302NT1G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS4C302NT1G is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of up to 230A. It features a low Rds On of 1.15mOhm at 10V.
✓ Total Stock: 44,006 pcs
$ Price Range: $0.99

NTMFS4C302NT1G Available from 5 distributors

✓ Authorised
✓ Non-Authorised

NTMFS4C302NT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS4C302NT1G Description

Short technical summary and product information.

The NTMFS4C302NT1G is a single N-Channel MOSFET from ON Semiconductor, designed for power applications. It offers a 30V drain-to-source breakdown voltage and a high continuous drain current capability of 230A at 25°C case temperature, and 41A at 25°C ambient temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 1.15mOhm at 30A and 10V Vgs, and 1.7mOhm at 4.5V Vgs. The gate charge (Qg) is 82 nC at 10V, and the input capacitance (Ciss) is 5780 pF at 15V.

 

This MOSFET operates within a temperature range of -55°C to 150°C. It is housed in an 8-PowerTDFN, 5-lead package, suitable for surface mounting. The device is RoHS3 compliant, MSL 1, and Pb-Free/Halogen Free.

 

With its compact footprint and low conduction losses, the NTMFS4C302NT1G is suitable for various power management applications where efficiency and space are critical.

NTMFS4C302NT1G Quick Information

Product Type: MOSFET
Series: NTMFS4C302NT1G
Canonical Name: N-Channel Logic Level MOSFET
Subcategory: Single

NTMFS4C302NT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS4C302NT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4C302NT1G Features

  • 30V drain-source breakdown voltage.
  • 230A maximum continuous drain current.
  • 1.15mOhm maximum drain-source resistance.
  • N-Channel MOSFET technology.
  • Surface mount 8-PowerTDFN package.

NTMFS4C302NT1G Applications

  • Suitable for power switching applications.
  • Ideal for compact power designs.
  • Efficient conduction loss minimization.
  • Logic level gate drive compatible.

NTMFS4C302NT1G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage of the NTMFS4C302NT1G?

The drain-to-source voltage is 30V.

What is the maximum continuous drain current for the NTMFS4C302NT1G?

The maximum continuous drain current is 230A at 25°C case temperature and 41A at 25°C ambient temperature.

What is the Rds On of the NTMFS4C302NT1G?

The Rds On is a maximum of 1.15mOhm at 30A and 10V Vgs, and 1.7mOhm at 4.5V Vgs.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C.

What package type is the NTMFS4C302NT1G MOSFET in?

It is in an 8-PowerTDFN, 5-lead package suitable for surface mounting.

Is the NTMFS4C302NT1G RoHS compliant?

Yes, it is RoHS3 Compliant.

Home
Account

Categories