NTMFS4C10NBT1G The NTMFS4C10NBT1G is an N-Channel MOSFET from On Semiconductor. It features a 30V drain-to-source voltage and a continuous drain current of 16.4A (Ta) / 46A (Tc).
Mfr Part #:

NTMFS4C10NBT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The NTMFS4C10NBT1G is an N-Channel MOSFET from On Semiconductor. It features a 30V drain-to-source voltage and a continuous drain current of 16.4A (Ta) / 46A (Tc).
✓ Total Stock: 329,640 pcs
$ Price Range: $0.99

NTMFS4C10NBT1G Available from 1 distributor

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NTMFS4C10NBT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS4C10NBT1G Description

Short technical summary and product information.

The NTMFS4C10NBT1G is an N-Channel MOSFET manufactured by On Semiconductor. It is designed for applications requiring a 30V drain-to-source breakdown voltage and offers a continuous drain current of 16.4A at 25°C ambient temperature and 46A at 25°C case temperature.

 

Key electrical characteristics include a maximum Rds On of 6.95mOhm at 30A and 10V gate drive voltage, with a gate threshold voltage of 2.2V at 250µA. The input capacitance (Ciss) is a maximum of 987pF at 15V Vds, and the maximum gate charge (Qg) is 18.6nC at 10V Vgs. The maximum gate-source voltage (Vgs) is ±20V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in a compact 5-DFN (5x6) package, specified as 8-PowerTDFN with 5 leads. The mounting type is surface mount, making it suitable for various PCB designs. The maximum power dissipation is 2.51W (Ta) and 23.6W (Tc).

 

Environmental compliance includes RoHS3 compliance and a Moisture Sensitivity Level (MSL) of 1. The REACH status is unaffected.

NTMFS4C10NBT1G Quick Information

Product Type: MOSFET
Series: NTMFS4C10NBT1G
Canonical Name: NTMFS4C10NBT1G N-Channel MOSFET
Subcategory: Single FETs, MOSFETs

NTMFS4C10NBT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS4C10NBT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4C10NBT1G Features

  • N-Channel MOSFET technology.
  • 30V drain-to-source voltage.
  • High continuous drain current.
  • Low Rds On resistance.
  • Surface mount 5-DFN package.

NTMFS4C10NBT1G Applications

  • Power management circuits.
  • Switching power supplies.
  • Load switch applications.
  • Battery powered devices.

NTMFS4C10NBT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NTMFS4C10NBT1G MOSFET?

The drain-to-source voltage (Vdss) for the NTMFS4C10NBT1G is 30V.

What is the continuous drain current rating for the NTMFS4C10NBT1G?

The continuous drain current is 16.4A at 25°C (Ta) and 46A at 25°C (Tc).

What is the Rds On (Max) for the NTMFS4C10NBT1G at specified conditions?

The Rds On (Max) is 6.95mOhm at 30A and 10V Vgs.

What is the operating temperature range for the NTMFS4C10NBT1G?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTMFS4C10NBT1G MOSFET supplied in?

The NTMFS4C10NBT1G is supplied in a 5-DFN (5x6) package, also described as 8-PowerTDFN with 5 leads.

Is the NTMFS4C10NBT1G RoHS compliant?

The NTMFS4C10NBT1G is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the NTMFS4C10NBT1G?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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