NTMFS4C09NAT1G The ON Semiconductor NTMFS4C09NAT1G is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 52A. It features a low Rds On of 5.8mOhm at 30A, 10V.
Mfr Part #:

NTMFS4C09NAT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS4C09NAT1G is an N-Channel MOSFET with a 30V drain-source voltage and a continuous drain current of 52A. It features a low Rds On of 5.8mOhm at 30A, 10V.
✓ Total Stock: 1,468,077 pcs
$ Price Range: $0.99

NTMFS4C09NAT1G Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
1,447,077 pcs
1447077 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
21,000 pcs
21000 pcs On Request 1 On Request On Request 19+ On Request On Request

NTMFS4C09NAT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id

NTMFS4C09NAT1G Description

Short technical summary and product information.

The ON Semiconductor NTMFS4C09NAT1G is an N-Channel MOSFET designed for power applications. It offers a drain-source voltage (Vdss) of 30V and can handle a continuous drain current of up to 52A (at case temperature) or 9A (at ambient temperature).

 

Key electrical characteristics include a low on-resistance (Rds On) of 5.8mOhm at 30A and 10V gate-source voltage, and a gate charge (Qg) of 1.9 nC at 4.5V. The input capacitance (Ciss) is 1252 pF at 15V.

 

This MOSFET operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-PowerTDFN, 5-Lead package and is designed for surface mounting.

 

With its robust specifications, the NTMFS4C09NAT1G is suitable for various power switching and control applications where efficient power management is critical.

NTMFS4C09NAT1G Quick Information

Product Type: MOSFET
Series: Ntmfs4c09n
Canonical Name: NTMFS4C09NAT1G N-Channel MOSFET
Subcategory: N-Channel

NTMFS4C09NAT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS4C09NAT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4C09NAT1G Features

  • 30V drain-source voltage rating.
  • 52A continuous drain current capability.
  • Low 5.8mOhm Rds On resistance.
  • Surface mount 8-PowerTDFN package.
  • N-Channel MOSFET technology.

NTMFS4C09NAT1G Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in power management systems.
  • Applicable in load switching.

NTMFS4C09NAT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage of the NTMFS4C09NAT1G?

The drain-source voltage (Vdss) is 30V.

What is the continuous drain current for the NTMFS4C09NAT1G?

The continuous drain current is 52A at the case temperature and 9A at the ambient temperature.

What is the Rds On for the NTMFS4C09NAT1G?

The Rds On is a maximum of 5.8mOhm at 30A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTMFS4C09NAT1G MOSFET in?

It is in an 8-PowerTDFN, 5-Lead package designed for surface mounting.

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