| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS4C020NT1G is a single N-Channel MOSFET from ON Semiconductor, designed for power applications. It features a maximum drain-to-source voltage (Vdss) of 30V and a low on-resistance (Rds(on)) of 0.7mOhm at 10V gate-source voltage.
This MOSFET is optimized for 4.5V gate drive and offers low gate charge and capacitance, minimizing driver losses. It can handle a continuous drain current of up to 370A at 25°C case temperature and 57A at 25°C ambient temperature. The device is housed in an 8-PowerTDFN, 5-lead package (5x6 mm footprint), suitable for surface mounting.
Key electrical characteristics include a gate-to-source voltage range of ±20V and a gate threshold voltage of 2.2V at 250µA. Thermal performance is supported by a junction-to-case thermal resistance of 0.93°C/W and a junction-to-ambient thermal resistance of 39°C/W. The operating temperature range is -55°C to 150°C (TJ). The device is Pb-free and Halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The maximum on-resistance (Rds(on)) is 0.7mOhm when tested at 30A drain current and 10V gate-source voltage.
The continuous drain current is rated at 370A when the case temperature is 25°C.
The operating junction and storage temperature range is from -55°C to 150°C.
It is supplied in an 8-PowerTDFN, 5-lead package, also referred to as 5-DFN (5x6) (8-SOFL).
Yes, the device is RoHS3 Compliant.