NTMFS4983NFT1G The ON Semiconductor NTMFS4983NFT1G is an N-Channel MOSFET with a 30V drain-source voltage. It offers a continuous current rating of 22A (Ta) and 106A (Tc).
Mfr Part #:

NTMFS4983NFT1G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS4983NFT1G is an N-Channel MOSFET with a 30V drain-source voltage. It offers a continuous current rating of 22A (Ta) and 106A (Tc).
✓ Total Stock: 16,647 pcs
$ Price Range: $0.99

NTMFS4983NFT1G Available from 2 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
13,500 pcs
13500 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
3,147 pcs
3147 pcs On Request 1 On Request On Request On Request On Request On Request

NTMFS4983NFT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS4983NFT1G Description

Short technical summary and product information.

The ON Semiconductor NTMFS4983NFT1G is an N-Channel MOSFET designed for various power delivery applications. It features a maximum drain-to-source voltage of 30V and a gate-to-source voltage range of ±20V.

 

This MOSFET offers a low on-resistance of 2.1mOhm at 30A and 10V, minimizing conduction losses. Its input capacitance is rated at 3250 pF at 15V, and the gate charge is 47.9 nC at 10V, contributing to efficient switching.

 

With a continuous drain current of 22A at 25°C ambient temperature and 106A at 25°C case temperature, it is suitable for demanding applications. The maximum power dissipation is 1.7W at 25°C ambient temperature. The device operates within a temperature range of -55°C to 150°C.

 

The NTMFS4983NFT1G is packaged in an 8-PowerTDFN, 5-Lead (5x6) configuration and is designed for surface mounting.

NTMFS4983NFT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFS4983NFT1G N-Channel Power MOSFET

NTMFS4983NFT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

NTMFS4983NFT1G Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4983NFT1G Features

  • 30V drain-source voltage rating.
  • 22A (Ta) / 106A (Tc) continuous current.
  • Low 2.1mOhm on-resistance.
  • Surface mountable 5-DFN package.
  • Wide -55°C to 150°C operating temperature.

NTMFS4983NFT1G Applications

  • Used for CPU power delivery.
  • Suitable for DC-DC converters.
  • Ideal for low side switching.
  • Applied in telecom secondary rectification.

NTMFS4983NFT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the NTMFS4983NFT1G?

The maximum drain-to-source voltage (Vds) is 30V.

What is the continuous drain current rating?

The continuous drain current is 22A at 25°C ambient temperature and 106A at 25°C case temperature.

What is the on-resistance of the NTMFS4983NFT1G?

The maximum on-resistance (Rds(on)) is 2.1mOhm when measured at 30A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating junction temperature range is -55°C to 150°C.

What package type is the NTMFS4983NFT1G supplied in?

It is supplied in an 8-PowerTDFN, 5-Lead (5x6) package designed for surface mounting.

Is the NTMFS4983NFT1G RoHS compliant?

Yes, the device is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1.

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