| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
16,500 pcs
|
16500 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
1,500 pcs
|
1500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMFS4946NT1G is a single N-Channel MOSFET designed for power delivery applications. It features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of up to 100A when measured at the case temperature.
This MOSFET offers a low on-resistance (Rds) of 3.4mOhm at 30A and 10V, minimizing conduction losses. The gate charge (Qg) is 53nC at 11.5V, and the input capacitance (Ciss) is 3250pF at 12V, contributing to efficient switching.
The device operates within a temperature range of -55°C to 150°C (TJ). It is housed in an 8-PowerTDFN, 5-lead package, suitable for surface mounting.
Key electrical characteristics include a gate threshold voltage (Vgs(th)) of 2.5V at 250µA and a maximum gate-to-source voltage (Vgs) of ±20V. The power dissipation is rated at 890mW (Ta) and 55.5W (Tc).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) for the NTMFS4946NT1G is 30V.
The NTMFS4946NT1G has a maximum continuous drain current of 100A when measured at the case temperature.
The on-resistance (Rds) is a maximum of 3.4mOhm at 30A and 10V, and 5.1mOhm at 4.5V.
The operating junction and storage temperature range is -55°C to 150°C.
The NTMFS4946NT1G is in an 8-PowerTDFN, 5-lead package.
This MOSFET is designed for surface mounting.