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NTMFS4937NCT1G The ON Semiconductor NTMFS4937NCT1G is an N-Channel MOSFET with a 30V drain-source breakdown voltage. It features a low Rds On of 4mOhm at 30A, 10V.
Mfr Part #:

NTMFS4937NCT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS4937NCT1G is an N-Channel MOSFET with a 30V drain-source breakdown voltage. It features a low Rds On of 4mOhm at 30A, 10V.
✓ Total Stock: 6,000 pcs
$ Price Range: $0.99

NTMFS4937NCT1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
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6,000 pcs
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NTMFS4937NCT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Number of Channels
Power Dissipation
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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NTMFS4937NCT1G Description

Short technical summary and product information.

The ON Semiconductor NTMFS4937NCT1G is an N-Channel MOSFET designed for various electronic applications. It offers a drain-source breakdown voltage of 30V and a continuous drain current of 10.2A at ambient temperature.

 

Key electrical characteristics include a low drain-source on-resistance (Rds On) of 4mOhm at a drain current of 30A and gate-source voltage of 10V. The gate charge (Qg) is 31nC at 10V, and the input capacitance (Ciss) is 2516pF at 15V. The gate threshold voltage (Vgs(th)) is a maximum of 2.2V at 250µA, with a maximum gate-source voltage of ±20V.

 

This MOSFET utilizes Metal Oxide technology and is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. The package is 8-PowerTDFN with 5 leads. It is supplied in Cut Tape, MouseReel, or Reel packaging formats.

NTMFS4937NCT1G Quick Information

Product Type: MOSFET
Series: NTMFS4937NC
Canonical Name: NTMFS4937NCT1G N-Channel MOSFET
Subcategory: MOSFETs

NTMFS4937NCT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS4937NCT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4937NCT1G Features

  • N-Channel MOSFET with 30V drain-source voltage.
  • Low 4mOhm Rds On at 30A, 10V.
  • Continuous drain current of 10.2A.
  • Surface mountable 5-DFN package.
  • 31nC gate charge and 2516pF input capacitance.

NTMFS4937NCT1G Applications

  • Suitable for power switching applications.
  • Used in DC-DC converter circuits.
  • Ideal for load switch designs.
  • Applicable in battery management systems.

NTMFS4937NCT1G FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 30V.

What is the continuous drain current?

The continuous drain current is 10.2A.

What is the Rds On (Max) at specified conditions?

The Rds On is a maximum of 4mOhm at 30A, 10V.

What is the gate charge?

The gate charge is 31nC at 10V.

What is the input capacitance?

The input capacitance is 2516pF at 15V.

What type of MOSFET is this?

This is an N-Channel MOSFET.

What is the package type?

The package is 5-DFN (5x6) (8-SOFL) and it is surface mountable.

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