| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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This N-Channel MOSFET from ON Semiconductor, part number NTMFS4921NT1G, offers a drain-source voltage of 30V. It is rated for a continuous current of 8.8A at ambient temperature and 58.5A at case temperature. The on-resistance is specified as a maximum of 6.95mOhm at 30A and 10V gate-source voltage.
The device operates within a temperature range of -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 25 nC maximum at 11.5V and an input capacitance of 1400 pF maximum at 12V. The gate threshold voltage is 2.5V maximum at 250µA, with a maximum gate-source voltage of ±20V.
Packaged in an 8-PowerTDFN, 5-lead (5-DFN 5x6) configuration, this MOSFET is designed for surface mounting. Its power dissipation is rated at 870mW (Ta) and 38.5W (Tc).
This MOSFET is suitable for various power switching applications where efficient current handling and low on-resistance are critical. Its robust construction and specified parameters make it a reliable component for demanding electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vdss) for the NTMFS4921NT1G is 30V.
The NTMFS4921NT1G has a continuous current rating of 8.8A at ambient temperature and 58.5A at case temperature.
The maximum on-resistance (Rds On) for the NTMFS4921NT1G is 6.95mOhm when measured at 30A drain current and 10V gate-source voltage.
The operating temperature range for the NTMFS4921NT1G is -55°C to 150°C (TJ).
The NTMFS4921NT1G is supplied in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) size.
The NTMFS4921NT1G is a surface mount device.