| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
507 pcs
|
507 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTMFS4898NFT1G from ON Semiconductor is an N-Channel MOSFET designed for various electronic applications. It features a maximum drain-to-source voltage (Vds) of 30V and a continuous drain current (Id) of 117A at the case temperature, with a continuous drain current of 13.2A at 25°C ambient temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 3mOhm at 30A and 10V, a gate threshold voltage (Vgs(th)) of 2.5V at 1mA, and an input capacitance (Ciss) of 3233pF at 12V. The gate charge (Qg) is 49.5nC at 10V.
This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and is housed in an 8-PowerTDFN, 5-lead package, suitable for surface mounting. The package dimensions are approximately 4.9mm x 5.9mm x 1.05mm. It is supplied in Cut Tape packaging.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) for the NTMFS4898NFT1G is 30V.
The maximum continuous drain current (Id) for the NTMFS4898NFT1G is 117A at the case temperature and 13.2A at 25°C.
The Rds On is a maximum of 3mOhm at 30A and 10V.
The NTMFS4898NFT1G is an N-Channel MOSFET.
The NTMFS4898NFT1G is supplied in an 8-PowerTDFN, 5-lead package, in Cut Tape (CT).
The Moisture Sensitivity Level (MSL) is 1 Unlimited.