Mfr Part #:

NTMFS4852NT1G

The ON Semiconductor NTMFS4852NT1G is an N-Channel MOSFET with a 30V drain-source voltage and high current handling capabilities. It is designed for surface mount applications in a 5-DFN package.

✓ Total Stock: 45 pcs

$ Price Range: $0.99

NTMFS4852NT1G Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Partservice ✓ Non-Authorised Inventory information	45 pcs On Request	45 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

NTMFS4852NT1G Description

Short technical summary and product information.

This N-Channel MOSFET from ON Semiconductor, part number NTMFS4852NT1G, offers a drain-source voltage (Vdss) of 30V and significant current ratings of 16A (ambient) and 155A (case). Its low on-resistance is 2.1mOhm at 30A and 10V gate-source voltage, with a gate charge of 71.3 nC at 10V.

The device operates within a temperature range of -55°C to 150°C and features a maximum power dissipation of 900mW (ambient) or 86.2W (case). It is constructed using MOSFET (Metal Oxide) technology and has a gate-source voltage (Vgs) limit of ±20V, with a threshold voltage of 2.5V at 250µA.

Packaged in an 8-PowerTDFN, 5-lead (5x6) configuration, the NTMFS4852NT1G is designed for surface mounting. It is specified with an input capacitance (Ciss) of 4970 pF at 12V. The component is RoHS3 compliant and has an MSL rating of 1.

NTMFS4852NT1G Quick Information

Product Type: MOSFET

Canonical Name: N-Channel MOSFET

Subcategory: N-Channel

NTMFS4852NT1G Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

NTMFS4852NT1G Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS4852NT1G Features

30V drain-source voltage rating.
High current capability: 16A (Ta), 155A (Tc).
Low on-resistance: 2.1mOhm at 30A, 10V.
Surface mount 5-DFN package.
Operates from -55°C to 150°C.

NTMFS4852NT1G Applications

Power switching applications.
High-efficiency power supplies.
Motor control circuits.
Load switch applications.

NTMFS4852NT1G FAQs

6 frequently asked questions generated from this part’s specifications.

What is the drain-to-source voltage (Vdss) for the NTMFS4852NT1G?

The drain-to-source voltage (Vdss) is 30 V.

What is the maximum continuous current rating for the NTMFS4852NT1G?

The continuous current rating is 16A when measured at ambient temperature (Ta) and 155A when measured at case temperature (Tc).

What is the on-resistance (Rds On) of the NTMFS4852NT1G?

The maximum on-resistance is 2.1 mOhm at a drain current (Id) of 30A and gate-source voltage (Vgs) of 10V.

What is the operating temperature range for this MOSFET?

The operating temperature range is -55°C to 150°C (TJ).

What package type is the NTMFS4852NT1G MOSFET supplied in?

It is supplied in an 8-PowerTDFN, 5-lead (5x6) package.

How is the NTMFS4852NT1G MOSFET mounted?

The mounting type is Surface Mount.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	On Semiconductor
Current	16A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	71.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	4970 pF @ 12 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Package / Case	5-DFN (5x6) (8-SOFL)
Power Dissipation (Max)	900mW
Rds On (Max) @ Id, Vgs	2.1 mOhm @ 30A, 10V
Storage Temperature	°C ~ °C
Supplier Device Package	5-DFN (5x6) (8-SOFL)
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA