| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,498 pcs
|
1498 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS4839NHT1G is a power N-channel MOSFET manufactured by On Semiconductor. It is rated for a drain-to-source voltage of 30V and can handle a continuous drain current of up to 9.5A at 25°C. The device is packaged in a 5-pin DFN package, suitable for surface mounting on printed circuit boards. Its electrical characteristics make it suitable for switching and power management applications, including load switching, motor control, and power supplies. The device's high pulsed drain current capability of 192A allows it to handle transient conditions effectively. Its low on-resistance and high current ratings support efficient power conversion and switching performance.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 30 V.
The continuous drain current at 25°C is 9.5 A.
It uses a 5-pin DFN surface-mount package.