| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,314 pcs
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3314 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1,513 pcs
|
1513 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
96 pcs
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96 pcs | On Request | 1 | On Request | On Request | 2026-02-25 06:16:38 | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The ON Semiconductor NTMFS4833NT1G is a single N-Channel Power MOSFET. It is designed with low RDS(on) to minimize conduction losses, low capacitance for reduced driver losses, and optimized gate charge for minimized switching losses.
Key electrical specifications include a drain-to-source voltage (Vds) of 30V and a continuous drain current (Id) of up to 191A at a case temperature of 25°C. The on-resistance (Rds(on)) is as low as 2 mOhm at 30A and 10V gate drive. The device operates over a wide temperature range from -55°C to 150°C.
This MOSFET is housed in an 8-PowerTDFN, 5-lead package, suitable for surface mounting. It is designed for applications such as CPU power delivery, DC-DC converters, and low-side switching.
The device is Pb-Free, aligning with environmental standards. Its robust design and specifications make it suitable for demanding power management applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 30V.
The continuous drain current (Id) is 191A at a case temperature of 25°C and 138A at 85°C.
The on-resistance (Rds(on)) is a maximum of 2 mOhm at a drain current of 30A and gate voltage of 10V.
The operating junction and storage temperature range is from -55°C to +150°C.
It is supplied in an 8-PowerTDFN, 5-lead package.
Yes, the NTMFS4833NT1G is a Pb-Free device.