| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,828 pcs
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2828 pcs | On Request | 1 | On Request | On Request | 2005+ | On Request | On Request |
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| Tape & Reel | |
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| Vgs (Max) | |
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The ON Semiconductor NTMFS4120NT1G is a single N-Channel Power MOSFET designed for various applications. It offers a 30V drain-to-source voltage and a continuous drain current of 11A at 25°C ambient temperature. The MOSFET exhibits a low on-resistance of 4.5mOhm maximum at 26A drain current and 10V gate-to-source voltage, and a typical RDS(on) of 4.2mOhm at 4.5V gate drive.
This device is housed in an 8-PowerTDFN, 5-lead package and is designed for surface mounting. It operates across a wide temperature range from -55°C to 150°C (TJ). Key electrical characteristics include a gate charge of 50 nC maximum at 4.5V and an input capacitance of 3600 pF maximum at 24V.
The NTMFS4120NT1G is suitable for applications such as notebooks, graphics cards, DC-DC converters, and synchronous rectification. Its Pb-free construction aligns with environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vds) for the NTMFS4120NT1G is 30V.
The maximum continuous drain current (Id) for the NTMFS4120NT1G is 11A at 25°C ambient temperature.
The maximum on-resistance (Rds(on)) for the NTMFS4120NT1G is 4.5mOhm at 26A drain current and 10V gate-to-source voltage. The typical Rds(on) is 4.2mOhm at 4.5V gate drive.
The operating junction and storage temperature range for the NTMFS4120NT1G is -55°C to 150°C.
The NTMFS4120NT1G is supplied in an 8-PowerTDFN, 5-lead package.
Yes, the NTMFS4120NT1G is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the NTMFS4120NT1G is 1.