| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6,000 pcs
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6000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Drive Voltage (Max Rds On, Min Rds On) | |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Rds On (Max) @ Id, Vgs | |
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| Tape & Reel | |
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| Vgs (Max) | |
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This NTMFS08N004C is an N-Channel MOSFET from ON Semiconductor, utilizing their advanced PowerTrench process with Shielded Gate technology. This design optimizes for minimal on-state resistance and superior switching performance.
Key electrical specifications include a maximum drain-source voltage of 80V and a continuous drain current of 126A at 25°C case temperature. The on-resistance is as low as 4mOhm at 44A and 10V gate-source voltage. It also features a gate charge of 55nC at 10V and an input capacitance of 4250pF at 40V.
The device operates within a junction temperature range of -55°C to 150°C. It is housed in an 8-PowerTDFN package, suitable for surface mounting.
Applications for this MOSFET include primary DC-DC conversion, synchronous rectification in DC-DC and AC-DC converters, motor drives, and solar power systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 80V.
The continuous drain current is 126A at a case temperature of 25°C.
The maximum Rds On is 4mOhm when tested at 44A drain current and 10V gate-source voltage.
The operating and storage junction temperature range is -55°C to 150°C.
It is supplied in an 8-PowerTDFN package, also referred to as 8-PQFN (5x6), Power56.
The device is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.