| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
12,000 pcs
|
12000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Spacing | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The NTMFS010N10GTWG is a power MOSFET manufactured by On Semiconductor. It features a drain-to-source breakdown voltage of 100V and an N-Channel FET design. The device is suitable for high-current switching circuits, with a continuous drain current of up to 83A at 25°C and a power dissipation of 150W at the same temperature. Its package is PQFN56, which allows for surface-mount assembly and efficient thermal management. The MOSFET operates over a temperature range from -55°C to 175°C, making it suitable for various industrial and automotive applications. Its low on-resistance of 10.8mΩ at 31A and 10V drive voltage ensures efficient operation with minimal power loss.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.73 | $0.73 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage is 100V.
The continuous drain current at 25°C is 83A.
It uses a PQFN56 package.
-55°C to 175°C.