NTMFS005P03P8ZST1G The ON Semiconductor NTMFS005P03P8ZST1G is a P-Channel MOSFET with a 30V drain-to-source voltage. It offers a continuous drain current of 15.3A and a low on-resistance of 2.7mOhm.
Mfr Part #:

NTMFS005P03P8ZST1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFS005P03P8ZST1G is a P-Channel MOSFET with a 30V drain-to-source voltage. It offers a continuous drain current of 15.3A and a low on-resistance of 2.7mOhm.
✓ Total Stock: 2,960 pcs
$ Price Range: $0.99

NTMFS005P03P8ZST1G Available from 1 distributor

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✓ Non-Authorised
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2,960 pcs
2960 pcs On Request 1 On Request On Request On Request On Request On Request

NTMFS005P03P8ZST1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Lead Spacing
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Supplier Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

NTMFS005P03P8ZST1G Description

Short technical summary and product information.

The NTMFS005P03P8ZST1G from ON Semiconductor is a P-Channel MOSFET designed for various electronic applications. It features a drain-to-source voltage (Vdss) of 30V and can handle a continuous drain current (Id) of 15.3A at 25°C.

 

This MOSFET utilizes Metal Oxide Semiconductor (MOS) technology and has a low maximum on-resistance of 2.7mOhm at 22A and 10V gate-source voltage. Key electrical parameters include a gate charge (Qg) of 183 nC and an input capacitance (Ciss) of 7880 pF.

 

The device operates within a temperature range of -55°C to 150°C. It is supplied in a surface mountable 8-PowerTDFN, 5-leads package, with the supplier device package specified as 5-DFN (5x6) (8-SOFL). The maximum power dissipation is rated at 900mW (Ta).

NTMFS005P03P8ZST1G Quick Information

Product Type: MOSFET
Series: PT8P PORTFOLIO EXPANSION
Canonical Name: NTMFS005P03P8ZST1G P-Channel MOSFET
Subcategory: P-Channel

NTMFS005P03P8ZST1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFS005P03P8ZST1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFS005P03P8ZST1G Features

  • P-Channel MOSFET technology.
  • 30V drain-to-source voltage rating.
  • 15.3A continuous drain current.
  • Low 2.7mOhm maximum on-resistance.
  • Surface mountable 5-DFN package.

NTMFS005P03P8ZST1G Applications

  • Suitable for high-speed switching applications.
  • Used in power management circuits.
  • Ideal for motor control and driver circuits.
  • Applicable in portable electronic devices.
  • Suitable for load switching in industrial equipment.

NTMFS005P03P8ZST1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage (Vdss) for the NTMFS005P03P8ZST1G?

The drain-to-source voltage (Vdss) for the NTMFS005P03P8ZST1G is 30V.

What is the continuous drain current of the NTMFS005P03P8ZST1G?

The continuous drain current (Id) for the NTMFS005P03P8ZST1G is 15.3A at 25°C.

What is the maximum on-resistance (Rds On) for this MOSFET?

The maximum on-resistance (Rds On) for the NTMFS005P03P8ZST1G is 2.7mOhm at 22A and 10V.

What is the operating temperature range for the NTMFS005P03P8ZST1G?

The operating temperature range for the NTMFS005P03P8ZST1G is -55°C to 150°C.

What package type is the NTMFS005P03P8ZST1G supplied in?

The NTMFS005P03P8ZST1G is supplied in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting.

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