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NTMFD6H852NLT1G The ON Semiconductor NTMFD6H852NLT1G is a dual N-channel MOSFET with an 80V drain-source voltage. It features a surface mountable 8-PowerTDFN package.
Mfr Part #:

NTMFD6H852NLT1G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor NTMFD6H852NLT1G is a dual N-channel MOSFET with an 80V drain-source voltage. It features a surface mountable 8-PowerTDFN package.
✓ Total Stock: 7,500 pcs
$ Price Range: $0.99

NTMFD6H852NLT1G Available from 1 distributor

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✓ Non-Authorised
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Flip Electronics ✓
Non-Authorised Inventory information
7,500 pcs
On Request
7500 pcs On Request 1 On Request On Request On Request On Request On Request
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NTMFD6H852NLT1G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
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NTMFD6H852NLT1G Description

Short technical summary and product information.

The NTMFD6H852NLT1G from ON Semiconductor is a dual N-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 80V and a continuous drain current of 295mA. The on-resistance (Rds On) is a maximum of 1.6 Ohms at 500mA and 10V.

 

This MOSFET has a gate charge (Qg) of 5nC at 4.5V and a gate threshold voltage (Vgs(th)) of 2.5V at 250µA. It operates within a temperature range of -55°C to 175°C (TJ).

 

The component is housed in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) configuration, designed for surface mounting. Its RoHS3 compliance indicates adherence to environmental standards.

 

This device is suitable for applications requiring efficient switching and power management within its specified electrical and thermal limits.

NTMFD6H852NLT1G Quick Information

Product Type: MOSFET
Canonical Name: NTMFD6H852NLT1G Dual N-Channel MOSFET
Subcategory: N-Channel

NTMFD6H852NLT1G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

NTMFD6H852NLT1G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

NTMFD6H852NLT1G Features

  • Dual N-Channel MOSFET configuration.
  • 80V drain-to-source voltage rating.
  • Maximum 1.6 Ohm on-resistance.
  • Surface mount 8-PowerTDFN package.
  • Operates from -55°C to 175°C.

NTMFD6H852NLT1G Applications

  • Suitable for power switching circuits.
  • Used in general electronic designs.
  • Ideal for space-constrained applications.
  • Component for voltage regulation.

NTMFD6H852NLT1G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the NTMFD6H852NLT1G?

The drain-to-source voltage (Vdss) is 80V.

What is the maximum on-resistance of this MOSFET?

The maximum on-resistance is 1.6 Ohms at 500mA and 10V.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (TJ).

What package type is the NTMFD6H852NLT1G in?

It is in an 8-PowerTDFN package, specifically an 8-DFN (5x6) Dual Flag (SO8FL-Dual) for surface mounting.

Is the NTMFD6H852NLT1G RoHS compliant?

Yes, it is RoHS3 compliant.

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