| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,264 pcs
|
2264 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | |
| Drain-to-source breakdown voltage | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (@ VGS = VDS, ID = 25 µA) | |
| Gate to Source Voltage (Vgs) | |
| Gate-to-Source Leakage Current | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Temperature for Soldering Purposes | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| Negative Gate Threshold Voltage Temperature Coefficient | |
| On Resistance (@ 10 V) | |
| On Resistance (@ 4.5 V) | |
| Operating Temperature | |
| Power | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (@ VGS = 0 V, VDS = 60 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (@ VGS = 0 V, VDS = 60 V, TJ = 25 °C) |
The NTMFD5C674NLT1G from On Semiconductor is a Dual N-Channel MOSFET designed for efficient power management. It offers a drain-to-source voltage of 60V and a maximum continuous drain current of 42A at 25°C case temperature, with a lower rating of 11A at 25°C ambient temperature. The device boasts a low on-resistance of 14.4mOhm at 10A and 10V, minimizing conduction losses.
This MOSFET is housed in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package, suitable for surface mounting. Its small footprint (5x6 mm) makes it ideal for compact designs. The operating temperature range is -55°C to 175°C (TJ), and it features low gate charge and capacitance to minimize driver losses. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Key electrical characteristics include a gate threshold voltage of 2.2V maximum at 25µA and an input capacitance of 640pF at 25V. The device also provides a pulsed drain current capability of up to 119A and a source current of 44A through its body diode. Thermal resistance from junction to case is 2.86°C/W, and junction to ambient is 49°C/W when mounted on a standard FR4 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vds) is 60V.
The continuous drain current is 42A at 25°C case temperature and 11A at 25°C ambient temperature.
The typical on-resistance (Rds On) is 14.4mOhm at 10A drain current and 10V gate-to-source voltage.
The operating junction temperature range is -55°C to 175°C.
It is supplied in an 8-DFN (5x6) Dual Flag (SO8FL-Dual) package for surface mounting.
Yes, the NTMFD5C674NLT1G is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.