| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,500 pcs
|
4500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate Threshold Voltage (Maximum @ 30 µA) | |
| Gate Threshold Voltage (Minimum @ VGS = VDS, ID = 30 µA) | |
| Gate to Source Voltage (Vgs) | |
| Halogen Free | |
| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Spacing | |
| Lead Temperature for Soldering Purposes | |
| Medical Grade | |
| Military Grade | |
| Mounting Type | |
| On Resistance (Maximum @ 10 A, 10 V) | |
| On Resistance (Maximum @ 4.5 V) | |
| Operating Temperature | |
| Pb-Free | |
| Power | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Rds On (Max) @ Id, Vgs | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The NTMFD5C466NLT1G is a Dual N-Channel Power MOSFET manufactured by On Semiconductor. This device is designed for compact applications, featuring a small footprint of 5x6 mm. It offers a drain-to-source voltage (Vdss) of 40V and a continuous drain current of up to 52A at a case temperature of 25°C, and 14A at an ambient temperature of 25°C.
Key electrical characteristics include a low on-resistance (Rds(on)) of 7.4mOhm at 10A and 10V, minimizing conduction losses. The gate charge (Qg) is 16nC at 10V, and the input capacitance (Ciss) is 997pF at 25V, contributing to minimized driver losses. The gate threshold voltage (Vgs(th)) is a maximum of 2.2V at 30µA.
This MOSFET operates within a temperature range of -55°C to 175°C. It is available in an 8-PowerTDFN package and is designed for surface mounting. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
Thermal performance includes a junction-to-case thermal resistance of 4°C/W and a junction-to-ambient thermal resistance of 49°C/W when mounted on a specific FR4 board.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 40V.
The continuous drain current at TC = 25°C is 52A.
The maximum on-resistance (Rds On) is 7.4mOhm at 10A and 10V.
The operating temperature range is -55°C to 175°C.
It is supplied in an 8-PowerTDFN package.
Yes, the NTMFD5C466NLT1G is RoHS3 Compliant.