| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Continuous Drain Current (Maximum @ TA=100 °C) | |
| Continuous Drain Current (Maximum @ TA=25 °C) | |
| Continuous Drain Current (Maximum @ Tc=100 °C) | |
| Continuous Drain Current (Maximum @ Tc=25 °C) | |
| Drain-to-Source Breakdown Voltage Temperature Coefficient | |
| Drain-to-Source Voltage | |
| Drain-to-source breakdown voltage | |
| Gate Threshold Voltage (Typical/Maximum @ VGS = VDS, ID = 40 µA) | |
| Gate-to-Source Leakage Current | |
| Gate-to-Source Voltage | |
| Junction to Ambient Thermal Resistance | |
| Junction to Case Thermal Resistance | |
| Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Negative Threshold Temperature Coefficient | |
| Operating Junction and Storage Temperature | |
| Power Dissipation (Maximum @ TC=100 °C) | |
| Power Dissipation (Maximum @ TC=25 °C) | |
| Power Dissipation (Maximum @ Ta = 100 °C) | |
| Power Dissipation (Maximum) @ TA=25°C | |
| Pulsed Drain Current | |
| Rds On Max (Maximum @ 10 V) | |
| Rds On Max (Maximum @ @ 4.5 V) | |
| Single Pulse Drain-to-Source Avalanche Energy | |
| Source Current (Body Diode) | |
| Tape & Reel | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 40 V, TJ = 125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ VGS = 0 V, VDS = 40 V, TJ = 25 °C) |
This N-Channel Dual Power MOSFET, part number NTMFD5C462NLT1G from ON Semiconductor, is designed for power applications requiring efficient switching and low conduction losses. It features a drain-to-source voltage (VDSS) of 40V and a continuous drain current (ID) of up to 84A at a case temperature of 25°C. The low on-resistance, with a maximum of 4.7 mΩ at 10V gate drive, minimizes conduction losses, while low gate charge (QG) and capacitance contribute to reduced driver losses.
The device is housed in a compact 5x6 mm DFN8 (SO8FL) package, suitable for space-constrained designs. It supports surface mounting and operates within a wide junction temperature range of -55°C to +175°C. The MOSFET is Pb-Free and RoHS compliant, indicating adherence to environmental standards.
Key electrical characteristics include a gate threshold voltage (VGS(TH)) typically around 1.2V, and a maximum gate-to-source leakage current of 100 nA. Thermal performance is supported by a junction-to-case thermal resistance of 2.25 °C/W, enabling effective heat dissipation under load.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum continuous drain current at 25°C case temperature is 84A.
The typical on-resistance at 10V gate drive is 4.7mΩ.
The package type is DFN8 5x6 (SO8FL).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.