CSD75207W15
Texas Instruments
Dual P-channel MOSFET with 20V drain-source voltage, 3.9A drain current, and low on-resistance of 27mΩ at 4.5V. Housed in a compact 9-DSBGA package.
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3,000 pcs
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3000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
This N-Channel Dual Power MOSFET, part number NTMFD5C462NLT1G from ON Semiconductor, is designed for power applications requiring efficient switching and low conduction losses. It features a drain-to-source voltage (VDSS) of 40V and a continuous drain current (ID) of up to 84A at a case temperature of 25°C. The low on-resistance, with a maximum of 4.7 mΩ at 10V gate drive, minimizes conduction losses, while low gate charge (QG) and capacitance contribute to reduced driver losses.
The device is housed in a compact 5x6 mm DFN8 (SO8FL) package, suitable for space-constrained designs. It supports surface mounting and operates within a wide junction temperature range of -55°C to +175°C. The MOSFET is Pb-Free and RoHS compliant, indicating adherence to environmental standards.
Key electrical characteristics include a gate threshold voltage (VGS(TH)) typically around 1.2V, and a maximum gate-to-source leakage current of 100 nA. Thermal performance is supported by a junction-to-case thermal resistance of 2.25 °C/W, enabling effective heat dissipation under load.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage is 40V.
The maximum continuous drain current at 25°C case temperature is 84A.
The typical on-resistance at 10V gate drive is 4.7mΩ.
The package type is DFN8 5x6 (SO8FL).
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
